STD1HN60K3, STU1HN60K3 دیتاشیت

STD1HN60K3, STU1HN60K3

مشخصات دیتاشیت

نام دیتاشیت STD1HN60K3, STU1HN60K3
حجم فایل 1476.131 کیلوبایت
نوع فایل pdf
تعداد صفحات 19

مشاهده دیتاشیت STD1HN60K3, STU1HN60K3

دانلود دیتاشیت

سایر مستندات

STD1HN60K3 19 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STD1HN60K3
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 27W
  • Total Gate Charge (Qg@Vgs): 9.5nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 140pF@50V
  • Continuous Drain Current (Id): 1.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.75V@50uA
  • Reverse Transfer Capacitance (Crss@Vds): 2pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7Ω@10V,600mA
  • Package: DAPK
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Cut Tape (CT)
  • Part Status: Discontinued at Digi-Key
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: STD1HN
  • detail: N-Channel 600V 1.2A (Tc) 27W (Tc) Surface Mount DPAK

محصولات مشابه